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Negatron effects in CdSe1 − xTex and ZnS1−xSex films
Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS 1− x Se x films, and the slowly relaxing negative phot...
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| Published in: | Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2014, Vol.8 (1), p.131-137 |
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| Language: | English |
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| container_end_page | 137 |
| container_issue | 1 |
| container_start_page | 131 |
| container_title | Surface investigation, x-ray, synchrotron and neutron techniques |
| container_volume | 8 |
| creator | Jafarov, M. A. Nasirov, E. F. Mamedova, S. A. Mekhtiev, R. F. |
| description | Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS
1−
x
Se
x
films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe
1 −
x
Te
x
films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains. |
| doi_str_mv | 10.1134/S102745101306027X |
| format | article |
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1−
x
Se
x
films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe
1 −
x
Te
x
films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.</description><identifier>ISSN: 1027-4510</identifier><identifier>EISSN: 1819-7094</identifier><identifier>DOI: 10.1134/S102745101306027X</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Chemistry and Materials Science ; Materials Science ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Surface investigation, x-ray, synchrotron and neutron techniques, 2014, Vol.8 (1), p.131-137</ispartof><rights>Pleiades Publishing, Ltd. 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Jafarov, M. A.</creatorcontrib><creatorcontrib>Nasirov, E. F.</creatorcontrib><creatorcontrib>Mamedova, S. A.</creatorcontrib><creatorcontrib>Mekhtiev, R. F.</creatorcontrib><title>Negatron effects in CdSe1 − xTex and ZnS1−xSex films</title><title>Surface investigation, x-ray, synchrotron and neutron techniques</title><addtitle>J. Synch. Investig</addtitle><description>Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS
1−
x
Se
x
films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe
1 −
x
Te
x
films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.</description><subject>Chemistry and Materials Science</subject><subject>Materials Science</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>1027-4510</issn><issn>1819-7094</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNplT0tKA0EQbUTBGD2Au77AaFV_5rOUwR8Es5gEgpth0lUdJsSOTEeYI7j2iJ7EDrpzVa_eg_cR4hrhBlGb2wZBFcYioIY8wdWJmGCJVVZAZU4TTlx21M_FRYxbAFtom09E-cKb7jDsg2Tv2R2i7IOsqWGU359fclzwKLtA8jU0mIixSb_vd2_xUpz5bhf56u9OxfLhflE_ZbP543N9N8ti6rXKNHPptSKrXGmVycsOFCEZbykploDAu8qtKyzs2jOwcaQAre80OaVJT4X69Y3vQx82PLTb_ccQUmSL0B63t_-26x9Efk0N</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Jafarov, M. A.</creator><creator>Nasirov, E. F.</creator><creator>Mamedova, S. A.</creator><creator>Mekhtiev, R. F.</creator><general>Pleiades Publishing</general><scope/></search><sort><creationdate>2014</creationdate><title>Negatron effects in CdSe1 − xTex and ZnS1−xSex films</title><author>Jafarov, M. A. ; Nasirov, E. F. ; Mamedova, S. A. ; Mekhtiev, R. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-s113X-3ee8f32d52c852468a02d1d4f5dee85d0d0fc9cb9175bfe0e4cd2015fa3dc23d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Chemistry and Materials Science</topic><topic>Materials Science</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jafarov, M. A.</creatorcontrib><creatorcontrib>Nasirov, E. F.</creatorcontrib><creatorcontrib>Mamedova, S. A.</creatorcontrib><creatorcontrib>Mekhtiev, R. F.</creatorcontrib><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jafarov, M. A.</au><au>Nasirov, E. F.</au><au>Mamedova, S. A.</au><au>Mekhtiev, R. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Negatron effects in CdSe1 − xTex and ZnS1−xSex films</atitle><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle><stitle>J. Synch. Investig</stitle><date>2014</date><risdate>2014</risdate><volume>8</volume><issue>1</issue><spage>131</spage><epage>137</epage><pages>131-137</pages><issn>1027-4510</issn><eissn>1819-7094</eissn><abstract>Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS
1−
x
Se
x
films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe
1 −
x
Te
x
films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S102745101306027X</doi><tpages>7</tpages></addata></record> |
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| ispartof | Surface investigation, x-ray, synchrotron and neutron techniques, 2014, Vol.8 (1), p.131-137 |
| issn | 1027-4510 1819-7094 |
| language | eng |
| recordid | cdi_springer_journals_10_1134_S102745101306027X |
| source | Springer Link |
| subjects | Chemistry and Materials Science Materials Science Surfaces and Interfaces Thin Films |
| title | Negatron effects in CdSe1 − xTex and ZnS1−xSex films |
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