Resistive switching in TiN/HfxAl1 − xOy/HfO2/TiN and TiN/HfO2/Ti/TiN structures

The memristor metal-oxide-metal structures involving the layers of stoichiometric hafnia and nonstoichiometric hafnia doped with aluminum, as well as the metal-oxide-extracting metal layer structures involving the layers of hafnia and titanium, are fabricated. The oxide layers are coated using the a...

Full description

Saved in:
Bibliographic Details
Published in:Russian microelectronics 2014, Vol.43 (5), p.328-332
Main Authors: Orlov, O. M., Gornev, E. S., Shadrin, A. V., Zaitsev, S. A., Morozov, S. A., Zablotskii, A. V.
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The memristor metal-oxide-metal structures involving the layers of stoichiometric hafnia and nonstoichiometric hafnia doped with aluminum, as well as the metal-oxide-extracting metal layer structures involving the layers of hafnia and titanium, are fabricated. The oxide layers are coated using the atomic layer deposition. The resistive switching parameters of the structures are determined.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739714050059