The crystallization kinetics of nanothin amorphous TlGa1 − xGexSe2 films

The kinetics of phase transformations of amorphous Ge-doped TlGaSe 2 films has been investigated by kinematic electron diffraction. It is shown that the crystallization of 30-nm-thick amorphous films obtained both in the absence of external effects and in an external electric field occurs according...

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Bibliographic Details
Published in:Crystallography reports 2009, Vol.54 (3), p.513-515
Main Authors: Alekberov, E. Sh, Sharifova, A. K., Ismayilov, D. I.
Format: Article
Language:English
Subjects:
Crystallography and Scattering Methods
Physics
Physics and Astronomy
Surface and Thin Films
Online Access:Get full text
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Summary:The kinetics of phase transformations of amorphous Ge-doped TlGaSe 2 films has been investigated by kinematic electron diffraction. It is shown that the crystallization of 30-nm-thick amorphous films obtained both in the absence of external effects and in an external electric field occurs according to the regularities established by Avrami and Kolmogorov and described by the analytical expression V t = V 0 [1 − exp(− kt m )]. The activation energies of nucleation and the further growth of nuclei have been determined from the kinetic curves of phase transformations.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774509030237