Effect of microwave irradiation on the resistance of Au-TiBx-Ge-Au-n-n+-n++-GaAs(InP) ohmic contacts

Temperature dependences of the contact resistivity ρ c of Au-TiB x -Ge-Au- n - n + - n ++ (GaAs)-InP ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that ρ c can decrease after microwave treatment in the entir...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012, Vol.46 (4), p.541-544
Main Authors: Belyaev, A. E., Sachenko, A. V., Boltovets, N. S., Ivanov, V. N., Konakova, R. V., Kudryk, Ya. Ya, Matveeva, L. A., Milenin, V. V., Novitskii, S. V., Sheremet, V. N.
Format: Article
Language:English
Subjects:
Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Temperature dependences of the contact resistivity ρ c of Au-TiB x -Ge-Au- n - n + - n ++ (GaAs)-InP ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that ρ c can decrease after microwave treatment in the entire temperature range of ρ c measurements (100–400 K). Good agreement between the theoretical and experimental ρ c ( T ) curves is attained and interpreted on the assumption that the dislocation density in the semiconductor near-surface region is varied as a result of microwave radiation.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612040021