Effect of microwave irradiation on the resistance of Au-TiBx-Ge-Au-n-n+-n++-GaAs(InP) ohmic contacts

Temperature dependences of the contact resistivity ρ c of Au-TiB x -Ge-Au- n - n + - n ++ (GaAs)-InP ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that ρ c can decrease after microwave treatment in the entir...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012, Vol.46 (4), p.541-544
Main Authors: Belyaev, A. E., Sachenko, A. V., Boltovets, N. S., Ivanov, V. N., Konakova, R. V., Kudryk, Ya. Ya, Matveeva, L. A., Milenin, V. V., Novitskii, S. V., Sheremet, V. N.
Format: Article
Language:English
Subjects:
Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
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container_issue 4
container_start_page 541
container_title Semiconductors (Woodbury, N.Y.)
container_volume 46
creator Belyaev, A. E.
Sachenko, A. V.
Boltovets, N. S.
Ivanov, V. N.
Konakova, R. V.
Kudryk, Ya. Ya
Matveeva, L. A.
Milenin, V. V.
Novitskii, S. V.
Sheremet, V. N.
description Temperature dependences of the contact resistivity ρ c of Au-TiB x -Ge-Au- n - n + - n ++ (GaAs)-InP ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that ρ c can decrease after microwave treatment in the entire temperature range of ρ c measurements (100–400 K). Good agreement between the theoretical and experimental ρ c ( T ) curves is attained and interpreted on the assumption that the dislocation density in the semiconductor near-surface region is varied as a result of microwave radiation.
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subjects Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
title Effect of microwave irradiation on the resistance of Au-TiBx-Ge-Au-n-n+-n++-GaAs(InP) ohmic contacts
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