Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu1 − xZnxInS2 alloy

The growth technology of single crystals of Cu 1 − x Zn x InS 2 alloys ( x = 0–12) of n -type conductivity is developed. The formation mechanism of the alloy is investigated by X-ray structural analysis. It is shown that the single crystals have chalcopyrite structure, and the unit-cell parameters d...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-03, Vol.48 (3), p.286-291
Main Authors: Novosad, A. V., Bozhko, V. V., Davydyuk, H. E., Parasyuk, O. V., Gerasymyk, O. R., Vainorius, N., Sakavichus, A., Janonis, V., Kazukauskas, V.
Format: Article
Language:English
Subjects:
Electronic Properties of Semiconductors
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
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Summary:The growth technology of single crystals of Cu 1 − x Zn x InS 2 alloys ( x = 0–12) of n -type conductivity is developed. The formation mechanism of the alloy is investigated by X-ray structural analysis. It is shown that the single crystals have chalcopyrite structure, and the unit-cell parameters depend on the alloy composition. The temperature dependence of the electrical conductivity in the temperature range T = 27–300 K and the spectral distribution of the photoconductivity at T ≈ 30 K are investigated. Induced photoconductivity is found for CuInS 2 -ZnIn 2 S 4 with a content of ∼8 and ∼12 mol % ZnIn 2 S 4 and thermally stimulated currents are investigated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614030191