Secondary ion emission from a GaAs single crystal upon bombardment with Bim+ cluster ions

Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bi m + ( m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2016, Vol.80 (2), p.105-108
Main Authors: Morozov, S. N., Rasulev, U. Kh
Format: Article
Language:English
Subjects:
Hadrons
Heavy Ions
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the 22nd International Conference “Ion-Surface Interaction (ISI-2015)”
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Summary:Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bi m + ( m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga + and Ga 2 + ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga + ions upon bombardment with Bi 2 + –Bi 5 + –ions is 35–75%.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873816020210