Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

• Published in: Journal of electronic materials 2007-12, Vol.36 (12), p.1621-1624
• Main Authors: AGGERSTAM, T, PINOS, A, MARCINKEVICIUS, S, LINNARSSON, M, LOURDUDOSS, S
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; deep acceptor; electron capture cross section; Electronics; Electrons; Exact sciences and technology; GaN; high electron mobility transistor (HEMT); INP; IRON; LAYERS; LEVEL; Luminescence; Materials science; metal-organic vapor phase epitaxy (MOVPE); Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; OPTICAL-PROPERTIES; Photoluminescence; Physics; semi-insulating; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; TECHNOLOGY; TEKNIKVETENSKAP; Transistors; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0361-5235; 1543-186X; 1543-186X
• DOI: 10.1007/s11664-007-0202-9

Carrier trapping of Fe^sup 3+^/Fe^sup 2+^ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10^sup 18^ cm^sup -3^, the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe^sup 3+^ ions, which is equal to 1.9 × 10^sup -15^ cm^sup 2^. The upper bound for the cross-section of the hole capture of Fe^sup 2+^ was evaluated as 1 × 10^sup -15 ^ cm^sup 2^. [PUBLICATION ABSTRACT]