Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

Carrier trapping of Fe^sup 3+^/Fe^sup 2+^ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10^sup 18^ cm^sup -3^, the luminescence decay times are strongly dependent on the Fe concentration, i...

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Published in:Journal of electronic materials 2007-12, Vol.36 (12), p.1621-1624
Main Authors: AGGERSTAM, T, PINOS, A, MARCINKEVICIUS, S, LINNARSSON, M, LOURDUDOSS, S
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
deep acceptor
electron capture cross section
Electronics
Electrons
Exact sciences and technology
GaN
high electron mobility transistor (HEMT)
INP
IRON
LAYERS
LEVEL
Luminescence
Materials science
metal-organic vapor phase epitaxy (MOVPE)
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
OPTICAL-PROPERTIES
Photoluminescence
Physics
semi-insulating
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
TECHNOLOGY
TEKNIKVETENSKAP
Transistors
Vapor phase epitaxy
growth from vapor phase
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LOURDUDOSS, S
description Carrier trapping of Fe^sup 3+^/Fe^sup 2+^ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10^sup 18^ cm^sup -3^, the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe^sup 3+^ ions, which is equal to 1.9 × 10^sup -15^ cm^sup 2^. The upper bound for the cross-section of the hole capture of Fe^sup 2+^ was evaluated as 1 × 10^sup -15 ^ cm^sup 2^. [PUBLICATION ABSTRACT]
doi_str_mv 10.1007/s11664-007-0202-9
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For the investigated Fe doping levels on the order of 10^sup 18^ cm^sup -3^, the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe^sup 3+^ ions, which is equal to 1.9 × 10^sup -15^ cm^sup 2^. The upper bound for the cross-section of the hole capture of Fe^sup 2+^ was evaluated as 1 × 10^sup -15 ^ cm^sup 2^. 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source Springer Link
subjects Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
deep acceptor
electron capture cross section
Electronics
Electrons
Exact sciences and technology
GaN
high electron mobility transistor (HEMT)
INP
IRON
LAYERS
LEVEL
Luminescence
Materials science
metal-organic vapor phase epitaxy (MOVPE)
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
OPTICAL-PROPERTIES
Photoluminescence
Physics
semi-insulating
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
TECHNOLOGY
TEKNIKVETENSKAP
Transistors
Vapor phase epitaxy
growth from vapor phase
title Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire
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