Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Ni-salicided MOSFETs with a gate stack of ALD Al2O3/HfO2/Al2O3 high-kappa dielectric and poly-SiGe gate electrode were fabricated. The Si pMOSFETs with an EOT of 1.7 nm showed an expected gate leakage current reduction compared to SiO2 with the same EOT and a mobility around 20% lower than the unive...

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Bibliographic Details
Published in:Microelectronic engineering 2005, Vol.77 (1), p.36-41
Main Authors: WU, D, VON HAARTMAN, M, SEGER, J, TOIS, E, TUOMINEN, M, HELLSTRÖM, P.-E, ÖSTLING, M, ZHANG, S.-L
Format: Article
Language:English
Subjects:
Applied sciences
atomic layer deposition
dielectrics
Electronics
Exact sciences and technology
high-kappa
MOSFET
poly-SiGe
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
strained SiGe
Transistors
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Summary:Ni-salicided MOSFETs with a gate stack of ALD Al2O3/HfO2/Al2O3 high-kappa dielectric and poly-SiGe gate electrode were fabricated. The Si pMOSFETs with an EOT of 1.7 nm showed an expected gate leakage current reduction compared to SiO2 with the same EOT and a mobility around 20% lower than the universal curve. The strained SiGe surface-channel pMOSFETs with the same gate stack showed an enhanced current drive and hole mobility. The Si nMOSFETs, however, exhibited a degraded subthreshold slope and a lower current drive even compared with the Si pMOSFETs. Possible reasons for the degradation of Si nMOSFETs were discussed.
ISSN:0167-9317
1873-5568
1873-5568
DOI:10.1016/j.mee.2004.08.004