Enhanced boron diffusion in excimer laser preannealed Si

We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1 × 10 16 cm − 2 . Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2005-04, Vol.86 (15), p.151902-151902-3
Main Authors: Monakhov, E. V., Svensson, B. G., Linnarsson, M. K., La Magna, A., Spinella, C., Bongiorno, C., Privitera, V., Fortunato, G., Mariucci, L.
Format: Article
Language:English
Subjects:
ANNEALING
BORON
DIFFUSION
dopant diffusion
energy implanted boron
EXCIMER LASERS
IMPURITIES
injection
ION IMPLANTATION
KEV RANGE 01-10
MATERIALS SCIENCE
redistribution
SEMICONDUCTOR MATERIALS
SILICON
SPATIAL DISTRIBUTION
SURFACES
temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1 × 10 16 cm − 2 . Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the "standard" diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.1899765