Loading…
Enhanced boron diffusion in excimer laser preannealed Si
We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1 × 10 16 cm − 2 . Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has...
Saved in:
| Published in: | Applied physics letters 2005-04, Vol.86 (15), p.151902-151902-3 |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c415t-45158252583d5eceb427cd6f57571c04e3709a6b590ca64e5d81e634139db0593 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c415t-45158252583d5eceb427cd6f57571c04e3709a6b590ca64e5d81e634139db0593 |
| container_end_page | 151902-3 |
| container_issue | 15 |
| container_start_page | 151902 |
| container_title | Applied physics letters |
| container_volume | 86 |
| creator | Monakhov, E. V. Svensson, B. G. Linnarsson, M. K. La Magna, A. Spinella, C. Bongiorno, C. Privitera, V. Fortunato, G. Mariucci, L. |
| description | We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of
1
keV
and a dose of
1
×
10
16
cm
−
2
. Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the "standard" diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement. |
| doi_str_mv | 10.1063/1.1899765 |
| format | article |
| fullrecord | <record><control><sourceid>swepub_osti_</sourceid><recordid>TN_cdi_swepub_primary_oai_DiVA_org_kth_14727</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_DiVA_org_kth_14727</sourcerecordid><originalsourceid>FETCH-LOGICAL-c415t-45158252583d5eceb427cd6f57571c04e3709a6b590ca64e5d81e634139db0593</originalsourceid><addsrcrecordid>eNp1kMtKAzEUhoMoWKsL32DAleDUnGROMtkIpdYLFFx42YZMJmOj7UxJpqhvb2yrOzfnAh8_Px8hp0BHQAW_hBGUSkmBe2QAVMqcA5T7ZEAp5blQCIfkKMa39CLjfEDKaTs3rXV1VnWha7PaN806-nT5NnOf1i9dyBYmprkKzrStM4sEP_pjctCYRXQnuz0kzzfTp8ldPnu4vZ-MZ7ktAPu8QMCSIcOS1-isqwombS0alCjB0sJxSZURFSpqjSgc1iU4wQvgqq4oKj4kF9vc-OFW60qvgl-a8KU74_W1fxnrLrzq936uoZBMJvxsi3ex9zpa3zs7t13qbXvNqKSMKUzU-ZayoYsxuOYvFqj-8ahB7zwm9mpXIIWZPqn5H_6VqTcy9UYm_wZUhHhS</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Enhanced boron diffusion in excimer laser preannealed Si</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Monakhov, E. V. ; Svensson, B. G. ; Linnarsson, M. K. ; La Magna, A. ; Spinella, C. ; Bongiorno, C. ; Privitera, V. ; Fortunato, G. ; Mariucci, L.</creator><creatorcontrib>Monakhov, E. V. ; Svensson, B. G. ; Linnarsson, M. K. ; La Magna, A. ; Spinella, C. ; Bongiorno, C. ; Privitera, V. ; Fortunato, G. ; Mariucci, L.</creatorcontrib><description>We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of
1
keV
and a dose of
1
×
10
16
cm
−
2
. Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the "standard" diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.</description><identifier>ISSN: 0003-6951</identifier><identifier>ISSN: 1077-3118</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1899765</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ANNEALING ; BORON ; DIFFUSION ; dopant diffusion ; energy implanted boron ; EXCIMER LASERS ; IMPURITIES ; injection ; ION IMPLANTATION ; KEV RANGE 01-10 ; MATERIALS SCIENCE ; redistribution ; SEMICONDUCTOR MATERIALS ; SILICON ; SPATIAL DISTRIBUTION ; SURFACES ; temperature</subject><ispartof>Applied physics letters, 2005-04, Vol.86 (15), p.151902-151902-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-45158252583d5eceb427cd6f57571c04e3709a6b590ca64e5d81e634139db0593</citedby><cites>FETCH-LOGICAL-c415t-45158252583d5eceb427cd6f57571c04e3709a6b590ca64e5d81e634139db0593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1899765$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27924,27925,76383</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20702295$$D View this record in Osti.gov$$Hfree_for_read</backlink><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-14727$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Monakhov, E. V.</creatorcontrib><creatorcontrib>Svensson, B. G.</creatorcontrib><creatorcontrib>Linnarsson, M. K.</creatorcontrib><creatorcontrib>La Magna, A.</creatorcontrib><creatorcontrib>Spinella, C.</creatorcontrib><creatorcontrib>Bongiorno, C.</creatorcontrib><creatorcontrib>Privitera, V.</creatorcontrib><creatorcontrib>Fortunato, G.</creatorcontrib><creatorcontrib>Mariucci, L.</creatorcontrib><title>Enhanced boron diffusion in excimer laser preannealed Si</title><title>Applied physics letters</title><description>We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of
1
keV
and a dose of
1
×
10
16
cm
−
2
. Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the "standard" diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.</description><subject>ANNEALING</subject><subject>BORON</subject><subject>DIFFUSION</subject><subject>dopant diffusion</subject><subject>energy implanted boron</subject><subject>EXCIMER LASERS</subject><subject>IMPURITIES</subject><subject>injection</subject><subject>ION IMPLANTATION</subject><subject>KEV RANGE 01-10</subject><subject>MATERIALS SCIENCE</subject><subject>redistribution</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>SPATIAL DISTRIBUTION</subject><subject>SURFACES</subject><subject>temperature</subject><issn>0003-6951</issn><issn>1077-3118</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKAzEUhoMoWKsL32DAleDUnGROMtkIpdYLFFx42YZMJmOj7UxJpqhvb2yrOzfnAh8_Px8hp0BHQAW_hBGUSkmBe2QAVMqcA5T7ZEAp5blQCIfkKMa39CLjfEDKaTs3rXV1VnWha7PaN806-nT5NnOf1i9dyBYmprkKzrStM4sEP_pjctCYRXQnuz0kzzfTp8ldPnu4vZ-MZ7ktAPu8QMCSIcOS1-isqwombS0alCjB0sJxSZURFSpqjSgc1iU4wQvgqq4oKj4kF9vc-OFW60qvgl-a8KU74_W1fxnrLrzq936uoZBMJvxsi3ex9zpa3zs7t13qbXvNqKSMKUzU-ZayoYsxuOYvFqj-8ahB7zwm9mpXIIWZPqn5H_6VqTcy9UYm_wZUhHhS</recordid><startdate>20050411</startdate><enddate>20050411</enddate><creator>Monakhov, E. V.</creator><creator>Svensson, B. G.</creator><creator>Linnarsson, M. K.</creator><creator>La Magna, A.</creator><creator>Spinella, C.</creator><creator>Bongiorno, C.</creator><creator>Privitera, V.</creator><creator>Fortunato, G.</creator><creator>Mariucci, L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8V</scope></search><sort><creationdate>20050411</creationdate><title>Enhanced boron diffusion in excimer laser preannealed Si</title><author>Monakhov, E. V. ; Svensson, B. G. ; Linnarsson, M. K. ; La Magna, A. ; Spinella, C. ; Bongiorno, C. ; Privitera, V. ; Fortunato, G. ; Mariucci, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c415t-45158252583d5eceb427cd6f57571c04e3709a6b590ca64e5d81e634139db0593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ANNEALING</topic><topic>BORON</topic><topic>DIFFUSION</topic><topic>dopant diffusion</topic><topic>energy implanted boron</topic><topic>EXCIMER LASERS</topic><topic>IMPURITIES</topic><topic>injection</topic><topic>ION IMPLANTATION</topic><topic>KEV RANGE 01-10</topic><topic>MATERIALS SCIENCE</topic><topic>redistribution</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>SPATIAL DISTRIBUTION</topic><topic>SURFACES</topic><topic>temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Monakhov, E. V.</creatorcontrib><creatorcontrib>Svensson, B. G.</creatorcontrib><creatorcontrib>Linnarsson, M. K.</creatorcontrib><creatorcontrib>La Magna, A.</creatorcontrib><creatorcontrib>Spinella, C.</creatorcontrib><creatorcontrib>Bongiorno, C.</creatorcontrib><creatorcontrib>Privitera, V.</creatorcontrib><creatorcontrib>Fortunato, G.</creatorcontrib><creatorcontrib>Mariucci, L.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Kungliga Tekniska Högskolan</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Monakhov, E. V.</au><au>Svensson, B. G.</au><au>Linnarsson, M. K.</au><au>La Magna, A.</au><au>Spinella, C.</au><au>Bongiorno, C.</au><au>Privitera, V.</au><au>Fortunato, G.</au><au>Mariucci, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced boron diffusion in excimer laser preannealed Si</atitle><jtitle>Applied physics letters</jtitle><date>2005-04-11</date><risdate>2005</risdate><volume>86</volume><issue>15</issue><spage>151902</spage><epage>151902-3</epage><pages>151902-151902-3</pages><issn>0003-6951</issn><issn>1077-3118</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of
1
keV
and a dose of
1
×
10
16
cm
−
2
. Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the "standard" diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1899765</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-04, Vol.86 (15), p.151902-151902-3 |
| issn | 0003-6951 1077-3118 1077-3118 |
| language | eng |
| recordid | cdi_swepub_primary_oai_DiVA_org_kth_14727 |
| source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | ANNEALING BORON DIFFUSION dopant diffusion energy implanted boron EXCIMER LASERS IMPURITIES injection ION IMPLANTATION KEV RANGE 01-10 MATERIALS SCIENCE redistribution SEMICONDUCTOR MATERIALS SILICON SPATIAL DISTRIBUTION SURFACES temperature |
| title | Enhanced boron diffusion in excimer laser preannealed Si |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T20%3A21%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-swepub_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhanced%20boron%20diffusion%20in%20excimer%20laser%20preannealed%20Si&rft.jtitle=Applied%20physics%20letters&rft.au=Monakhov,%20E.%20V.&rft.date=2005-04-11&rft.volume=86&rft.issue=15&rft.spage=151902&rft.epage=151902-3&rft.pages=151902-151902-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.1899765&rft_dat=%3Cswepub_osti_%3Eoai_DiVA_org_kth_14727%3C/swepub_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c415t-45158252583d5eceb427cd6f57571c04e3709a6b590ca64e5d81e634139db0593%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |