Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

Lateral growth of Ni silicide towards the channel region of metal-oxide-semiconductor transistors (MOSFETs) fabricated on ultrathin silicon-on-insulator (SOI) is characterized using SOI wafers with a 20-nm-thick surface Si layer. With a 10-nm-thick Ni film for silicide formation, p-channel MOSFETs d...

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Bibliographic Details
Published in:Applied physics letters 2005-06, Vol.86 (25)
Main Authors: Seger, J., Hellström, P.-E., Lu, J., Malm, B. G., von Haartman, M., Östling, M., Zhang, S.-L.
Format: Article
Language:English
Subjects:
couples
diffusion
film formation
Fysik
mosfets
NATURAL SCIENCES
NATURVETENSKAP
ni2si
Physics
thin-films
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Summary:Lateral growth of Ni silicide towards the channel region of metal-oxide-semiconductor transistors (MOSFETs) fabricated on ultrathin silicon-on-insulator (SOI) is characterized using SOI wafers with a 20-nm-thick surface Si layer. With a 10-nm-thick Ni film for silicide formation, p-channel MOSFETs displaying ordinary device characteristics with silicided p+ source/drain regions were demonstrated. No lateral growth of NiSix under gate isolation spacers was found according to electron microscopy. When the Ni film was 20 nm thick, Schottky contact source/drain MOSFETs showing typical ambipolar characteristics were obtained. A severe lateral encroachment of NiSix into the channel region leading to an increased gate leakage was revealed, while no detectable voiding at the silicide front towards the Si channel was observed.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.1944888