Graphene directly grown on SiO2-based insulators

Strong effort is devoted to grow graphene directly on insulators to create a technological step towards cost effective mass production of high-frequency transistors on Si. We have shown recently, that direct graphene growth can be achieved on silicate substrates by solid carbon source deposition. He...

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Bibliographic Details
Main Authors: Seifarth, O., Lippert, G., Dabrowski, J., Lupina, G., Mehr, W., Lemme, M. C.
Format: Conference Proceeding
Language:English
Subjects:
Carbon
Carbon dioxide
Chip scale packages
Cost effective
Density functional theory
Density functional theory calculations
Electronic application
FETs
Graphene
Graphene growth
High-frequency transistors
Insulators
Number of layers
Photoelectron spectroscopy
Raman scattering
Semiconducting silicon
Silicate substrate
Silicates
Silicon
Solid carbon sources
Substrates
Temperature dependence
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Summary:Strong effort is devoted to grow graphene directly on insulators to create a technological step towards cost effective mass production of high-frequency transistors on Si. We have shown recently, that direct graphene growth can be achieved on silicate substrates by solid carbon source deposition. Here, we present a study on the growth of graphene on insulator by means of Raman and photoelectron spectroscopy, corroborated by density functional theory calculations. We address temperature dependence and the correlation between graphene quality and the number of layers. We show that this approach may open a pathway to Si-compatible graphene growth for electronic applications.
DOI:10.1109/SCD.2011.6068742