Modeling and gradient pattern analysis of irregular SFM structures of porous silicon

Technological applications in opto-electronic devices have increased the interest in characterizing porous silicon structure patterns. Due to its physical properties, solutions from KPZ 2D are adopted to simulate the structure of porous material interface whose spatial characteristics are equivalent...

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Bibliographic Details
Published in:Microelectronics 2006-04, Vol.37 (4), p.290-294
Main Authors: Baroni, M.P.M.A., Rosa, R.R., da Silva, A. Ferreira, Pepe, I., Roman, L.S., Ramos, F.M., Ahuja, R., Persson, C., Veje, E.
Format: Article
Language:English
Subjects:
asymmetric fragmentation patterns
dynamics
Gradient pattern analysis
KPZ equation
Nanostructures
Porous silicon
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Summary:Technological applications in opto-electronic devices have increased the interest in characterizing porous silicon structure patterns. Due to its physical properties, solutions from KPZ 2D are adopted to simulate the structure of porous material interface whose spatial characteristics are equivalent to those found in porous silicon samples. The analysis of the simulated and real Scanning Force Microscopy (SFM) surfaces was done using the Gradient Pattern Analysis (GPA). We found that the KPZ 2D model presented asymmetry levels compatible with the irregular surfaces observed by means of SFM images of π-Si.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/j.mejo.2005.05.029