Diode effect in asymmetric double-tunnel barriers with single-metal nanoclusters

Asymmetric double-tunnel barriers with the center electrode being a metal cluster in the quantum regime are studied. The zero dimensionality of the clusters used and the associated quantized energy spectra are manifest in well-defined steps in the current-voltage characteristic. Record high current...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (16)
Main Authors: Iovan, A., Haviland, D. B., Korenivski, V.
Format: Article
Language:English
Subjects:
junctions
memory
nanoparticles
particles
transport
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Summary:Asymmetric double-tunnel barriers with the center electrode being a metal cluster in the quantum regime are studied. The zero dimensionality of the clusters used and the associated quantized energy spectra are manifest in well-defined steps in the current-voltage characteristic. Record high current rectification ratios of ∼104 for tunneling through such clusters are demonstrated at room temperature. We are able to account for all of the experimentally observed features by modeling our double-barrier structures using a combination of discrete states and charging effects for tunneling through quantum dots.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.2195643