UV patterning of vanadium pentoxide films for device applications

In this work we present the results of selective chemical etching of amorphous vanadium pentoxide films after their modification by ultraviolet (UV) radiation. V2O5 resist can be either positive or negative, depending on the developer composition. It was shown that UV-exposed V2O5 films after develo...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2007-09, Vol.40 (17), p.5283-5286
Main Authors: Putrolaynen, V V, Velichko, A A, Pergament, A L, Cheremisin, A B, Grishin, A M
Format: Article
Language:English
Subjects:
electrical-properties
growth
laser irradiation
oxides
v2o5 thin-films
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Summary:In this work we present the results of selective chemical etching of amorphous vanadium pentoxide films after their modification by ultraviolet (UV) radiation. V2O5 resist can be either positive or negative, depending on the developer composition. It was shown that UV-exposed V2O5 films after development and vacuum annealing can be transformed into VO2 structures which exhibit an electrically induced resistance switching effect. The proposed method demonstrates the feasibility of using V2O5 as an effective inorganic resist material for ambient condition UV photomicrolithography. Also, this material has a great potential for fabrication of vanadium oxide-based devices.
ISSN:0022-3727
1361-6463
1361-6463
DOI:10.1088/0022-3727/40/17/040