Transient enhanced diffusion of implanted boron in 4H-silicon carbide

Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several μm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increas...

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Bibliographic Details
Published in:Applied physics letters 2000-03, Vol.76 (11), p.1434-1436
Main Authors: Janson, M. S., Linnarsson, M. K., Hallén, A., Svensson, B. G., Nordell, N., Bleichner, H.
Format: Article
Language:English
Subjects:
aluminum
behavior
silicon-carbide
vapor-phase epitaxy
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Summary:Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several μm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 °C is determined to 7×10−12 cm2/s, which is 160 times larger than the equilibrium B diffusivity given in the literature.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.126055