Loading…
High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits
A high gamma radiation hardness of 4H-SiC circuits is performed. The OR NOR circuits are based on emitter coupled logic (ECL), using integrated bipolar NPN transistors. Gain degradation in individual bipolar junction transistors (BJT) is minimal up to a dose of 38 Mrad (SiO 2 ), but for the dose of...
Saved in:
Published in: | IEEE transactions on nuclear science 2017-02, Vol.64 (2), p.852-858 |
---|---|
Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | A high gamma radiation hardness of 4H-SiC circuits is performed. The OR NOR circuits are based on emitter coupled logic (ECL), using integrated bipolar NPN transistors. Gain degradation in individual bipolar junction transistors (BJT) is minimal up to a dose of 38 Mrad (SiO 2 ), but for the dose of 332 Mrad (SiO 2 ) a degradation of 52% is observed. The SiC BJTs show higher radiation hardness than existing Si-technology and high stability under temperature stress. It is proposed that the oxide charge-dominated recombination is the key base current recombination mechanism contributing to gain degradation. An improvement in the gain is seen after annealing at 400 °C for 1800 s due to the possible annealing of some of the oxide defects contributing to the oxide charge. |
---|---|
ISSN: | 0018-9499 1558-1578 1558-1578 |
DOI: | 10.1109/TNS.2016.2642899 |