Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N-2 ambient

We have investigated the growth of quaternary In1-xGaxAsyP1-y/InP materials using TEA and TBP in a N-2 ambient. This process improves significantly the uniformity of In1-xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH...

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Bibliographic Details
Published in:Journal of electronic materials 2000-12, Vol.29 (12), p.1398
Main Authors: Keiper, D., Westphalen, R., Landgren, Gunnar
Format: Article
Language:English
Subjects:
alternative V-sources
atmosphere
large-area
MOCVD
nitrogen
OMVPE
TBA
TBP
vapor-phase epitaxy
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Summary:We have investigated the growth of quaternary In1-xGaxAsyP1-y/InP materials using TEA and TBP in a N-2 ambient. This process improves significantly the uniformity of In1-xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H-2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H-2 and N-2 is evaluated. Advantages with the TBA/TBP/N-2 process are discussed.
ISSN:1543-186X
0361-5235
DOI:10.1007/s11664-000-0125-1