Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

This paper presents a numerical simulation study investigating the effect of buried oxide on surface roughness scattering limited hole mobility (μSR) in ultrathin germanium-on-insulator (GeOI) MOSFETs, for the first time. The simulation considers wave function penetration at channel/oxide interface...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-06, Vol.64 (6), p.2611-2616
Main Authors: Xiaolei Wang, Jinjuan Xiang, Kai Han, Shengkai Wang, Jun Luo, Chao Zhao, Tianchun Ye, Radamson, Henry H., Simoen, Eddy, Wenwu Wang
Format: Article
Language:English
Subjects:
Buried oxide
Dielectrics
germanium-on-insulator (GeOI) MOSFET
mobility
MOSFET
Quantization (signal)
Rough surfaces
Scattering
Surface roughness
surface roughness scattering
Wave functions
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Summary:This paper presents a numerical simulation study investigating the effect of buried oxide on surface roughness scattering limited hole mobility (μSR) in ultrathin germanium-on-insulator (GeOI) MOSFETs, for the first time. The simulation considers wave function penetration at channel/oxide interface and nonlinear dependence of scattering matrix element on surface fluctuation. Three types of buried oxide materials are compared (GeO2, SiO2, and Si3N4). The μSR increases in the order of SiO2
ISSN:0018-9383
1557-9646
1557-9646
DOI:10.1109/TED.2017.2688489