Nitrogen passivation by implantation-induced point defects in 4H–SiC epitaxial layers

Ion implantation causes damage to the crystal lattice resulting in the loss of free charge carriers. In this study, low dose implantations using different ions and implantation doses are made to resolve the initial carrier loss in nitrogen-doped epitaxial layers. A strong dependence of compensation...

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Bibliographic Details
Published in:Applied surface science 2001-12, Vol.184 (1), p.263-267
Main Authors: Åberg, D., Hallén, A., Pellegrino, P., Svensson, B.G.
Format: Article
Language:English
Subjects:
4H-SiC
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Ion implantation
Passivation
Physics
Point defects
silicon
Structure of solids and liquids
crystallography
vacancy
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Summary:Ion implantation causes damage to the crystal lattice resulting in the loss of free charge carriers. In this study, low dose implantations using different ions and implantation doses are made to resolve the initial carrier loss in nitrogen-doped epitaxial layers. A strong dependence of compensation on nitrogen concentration is seen, showing that nitrogen is passivated by implantation-induced point defects. An activation energy of 3.2 eV for the dissociation of the passivated nitrogen center is obtained.
ISSN:0169-4332
1873-5584
1873-5584
DOI:10.1016/S0169-4332(01)00506-2