Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE

GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to depend on the growth temperature and dimethylhydra...

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Bibliographic Details
Published in:Journal of crystal growth 2003-02, Vol.248, p.431-436
Main Authors: Baskar, K., Sundgren, P., Douheret, O., Landgren, G.
Format: Article
Language:English
Subjects:
A1. Atomic force microscopy
A1. Photoluminescence
A1. Surface structure
A3. MOVPE
atomic force rnicroscopy
B2. III–V semiconductors
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
III-V semiconductors
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
MOVPE
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Solid surfaces and solid-solid interfaces
surface structure
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
temperature
Vapor phase epitaxy
growth from vapor phase
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Description
Summary:GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to depend on the growth temperature and dimethylhydrazine (DMHy) flow. Cross-sectional AFM image showed the presence of defects at the interface of GaInNAs/GaAs. The low temperature photoluminescence characteristics of the QWs as a function of growth temperature, DMHy flow and density of surface pits have been discussed. The origin of pit formation is addressed based on the pyrolysis products present during the growth of QWs. The results suggest that higher growth temperature maybe desirable to obtain good quality GaInNAs QWs.
ISSN:0022-0248
1873-5002
1873-5002
DOI:10.1016/S0022-0248(02)01936-X