Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical–mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate th...

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Bibliographic Details
Published in:Applied surface science 2004-03, Vol.224 (1), p.336-340
Main Authors: Suvar, E, Haralson, E, Radamson, H.H, Wang, Y.-B, Grahn, J.V, Malm, B.G, Östling, M
Format: Article
Language:English
Subjects:
Bipolar
Chemical–mechanical polishing
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
epitaxy
Exact sciences and technology
HBT
Leakage
Physics
Selective epitaxial growth
SiGeC
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Summary:Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical–mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage.
ISSN:0169-4332
1873-5584
1873-5584
DOI:10.1016/j.apsusc.2003.08.062