Characterization of quantum wells by cross-sectional Kelvin probe force microscopy

Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to characterize the electronic structure of InGaAs∕InP quantum wells. The KPFM signal shows clear peaks at the position of the quantum wells and exhibits a systematic trend for different wells. It is demonstrated that K...

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Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (22), p.5245-5247
Main Authors: Douhéret, O., Anand, S., Glatzel, Th, Maknys, K., Sadewasser, S.
Format: Article
Language:English
Subjects:
carriers
resolution
scanning capacitance microscopy
spreading resistance microscopy
surface
vacuum
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Summary:Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to characterize the electronic structure of InGaAs∕InP quantum wells. The KPFM signal shows clear peaks at the position of the quantum wells and exhibits a systematic trend for different wells. It is demonstrated that KPFM is capable of detecting quantum wells as narrow as 5nm. Evidence for carrier accumulation in the quantum wells is observed. A complete quantitative analysis of the quantum well properties is shown to be impeded by tip averaging effects and due to surface/interface states.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.1825622