Buried InP/Airhole Photonic‐Crystal Surface‐Emitting Lasers

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2021-02, Vol.218 (3), p.n/a
• Main Authors: Reuterskiöld Hedlund, Carl, Martins De Pina, João, Kalapala, Akhil, Liu, Zhonghe, Zhou, Weidong, Hammar, Mattias
• Format: Article
• Language: English
• Subjects: Crystal structure; Crystal surfaces; Crystals; Encapsulation; Epitaxial growth; epitaxial regrowth; Indium phosphides; Lasers; metal-organic vapor-phase epitaxy; Optical pumping; Parameters; Photonic crystals; photonic-crystal surface-emitting lasers
• ISSN: 1862-6300; 1521-396X; 0031-8965; 1862-6319
• DOI: 10.1002/pssa.202000416

Herein, the fabrication of InP photonic‐crystal surface‐emitting lasers (PCSELs) using a buried airhole/InP photonic‐crystal (PC) layer based on an epitaxial regrowth process is reported. The formation of PC voids in the InP crystal structure requires a precise tuning of the metal‐organic vapor‐phase epitaxy (MOVPE) growth parameters, where the regrowth evolution is a function of temperature, V/III ratio, and growth rate. With precise control of these parameters, it is possible to alter the airhole shape from complete infilling to perfect encapsulation. Low‐threshold lasing is demonstrated from these encapsulated airhole regrown PCSELs using optical pumping. Herein, the fabrication of InGaAsP/InP photonic‐crystal surface‐emitting lasers (PCSELs) is reported. In specific, it deals with the formation of the buried airhole/InP photonic‐crystal layer using a metal‐organic vapor‐phase epitaxy (MOVPE) regrowth process. With precise control of MOVPE growth parameters, it is possible to adjust the regrowth from complete infilling to perfect encapsulation. Lasing emission is demonstrated under optical pumping.