Large-area InP-based crystalline nanomembrane flexible photodetectors

Large-area ( 3 × 3   mm 2 ) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n...

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Bibliographic Details
Published in:Applied physics letters 2010-03, Vol.96 (12), p.121107-121107-3
Main Authors: Yang, Weiquan, Yang, Hongjun, Qin, Guoxuan, Ma, Zhenqiang, Berggren, Jesper, Hammar, Mattias, Soref, Richard, Zhou, Weidong
Format: Article
Language:English
Subjects:
bending
dark conductivity
Fysik
III-V semiconductors
indium compounds
membranes
nanostructured materials
NATURAL SCIENCES
NATURVETENSKAP
photoconductivity
photodetectors
Physics
polymers
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Summary:Large-area ( 3 × 3   mm 2 ) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.3372635