Study of Pseudo Spin Valves Based on L1 (111)-Oriented FePt and FePtCu Fixed Layer With Tilted Magnetocrystalline Anisotropy

In this paper, we demonstrate a series of pseudo-spin-valve structures based on L1 0 (111)-oriented FePt and FePtCu with titled magnetocrystalline anisotropy. Highly ordered (111)-oriented L1 0 FePtCu with large anisotropy is achieved by optimizing the Cu content. Magnetoresistance (MR) up to 5% has...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2009-10, Vol.45 (10), p.3491-3494
Main Authors: Zha, C.L., Akerman, J.
Format: Article
Language:English
Subjects:
Iron
L1 FePt
L1 FePtCu
L1_{0} FePt
L1_{0} FePtCu
Magnetic anisotropy
Magnetic switching
Magnetoresistance
magnetoresistance (MR)
Perpendicular magnetic anisotropy
Polarization
pseudo spin valve
Random access memory
Spin valves
TECHNOLOGY
TEKNIKVETENSKAP
Temperature
titled anisotropy
Torque
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Summary:In this paper, we demonstrate a series of pseudo-spin-valve structures based on L1 0 (111)-oriented FePt and FePtCu with titled magnetocrystalline anisotropy. Highly ordered (111)-oriented L1 0 FePtCu with large anisotropy is achieved by optimizing the Cu content. Magnetoresistance (MR) up to 5% has been obtained by 1) optimizing the FePtCu growth using different underlayers, 2) enhancing the interface spin polarization using thin CoFe at the Cu interfaces, and 3) adjusting the Cu spacer thickness. The substantial MR realized with tilted fixed layer magnetization is an important prerequisite for the realization of tilted polarizer spin torque oscillators (STOs) or spin-transfer torque magnetoresistive random access memories (STT-MRAMs).
ISSN:0018-9464
1941-0069
1941-0069
DOI:10.1109/TMAG.2009.2022317