AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

• Published in: Journal of crystal growth 2008-11, Vol.310 (23), p.4927-4931
• Main Authors: Gautier, S., Aggerstam, T., Pinos, A., Marcinkevičius, S., Liu, K., Shur, M., O’Malley, S.M., Sirenko, A.A., Djebbour, Z., Migan-Dubois, A., Moudakir, T., Ougazzaden, A.
• Format: Article
• Language: English
• Subjects: A3. Metalorganic vapour phase epitaxy; AlGaN; B1. AlGaN; B1. Nitrides; B2. Semiconducting gallium compounds; Electrical engineering, electronics and photonics; Elektroteknik, elektronik och fotonik; Metalorganic vapour phase epitaxy; Nitrides; Optics; Physics; Semiconducting gallium compounds; TECHNOLOGY; TEKNIKVETENSKAP
• ISSN: 0022-0248; 1873-5002; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.08.040

Al x Ga 1− x N/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.