Metal nano-floating gate memory devices fabricated at low temperature

• Published in: Microelectronic engineering 2006-04, Vol.83 (4), p.1563-1566
• Main Authors: Koliopoulou, S., Dimitrakis, P., Goustouridis, D., Normand, P., Pearson, C., Petty, M.C., Radamson, H., Tsoukalas, D.
• Format: Article
• Language: English
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Hybrid electronics; Integrated circuits; Integrated circuits by function (including memories and processors); Langmuir-Blodgett deposition; Magnetic and optical mass memories; Memory; Nanoparticles; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiGe; Storage and reproduction of information; Transistors; Wafer bonding
• ISSN: 0167-9317; 1873-5568; 1873-5568
• DOI: 10.1016/j.mee.2006.01.235

In this communication, we report on the realization of low-temperature processed Electrically Erasable Programmable Read-Only Memory (EEPROM) like device with embedded gold nanoparticles. The realization is based on the fabrication of a V-groove SiGe Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir–Blodgett (LB) technique. Such structures were processed at a temperature lower than 400 °C. The electrical characteristics of the final hybrid Metal Insulator Semiconductor FET (MISFET) memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented.