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Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/...

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Bibliographic Details
Published in:Optical and quantum electronics 2011-10, Vol.42 (11-13), p.659-666
Main Authors: Shi, Wei, Faraji, Behnam, Greenberg, Mark, Berggren, Jesper, Xiang, Yu, Hammar, Mattias, Lestrade, Michel, Li, Zhi-Qiang, Li, Z. M. Simon, Chrostowski, Lukas
Format: Article
Language:English
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Summary:A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.
ISSN:0306-8919
1572-817X
1572-817X
DOI:10.1007/s11082-011-9444-0