Navigation aids in the search for future high- k dielectrics: Physical and electrical trends

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investi...

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Bibliographic Details
Published in:Solid-state electronics 2007-04, Vol.51 (4), p.622-626
Main Authors: Engström, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K.
Format: Article
Language:English
Subjects:
CMOS
Dielectric constant
High- k dielectrics
Rare earth oxides
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Summary:From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
ISSN:0038-1101
1879-2405
1879-2405
DOI:10.1016/j.sse.2007.02.021