Comparison of metal gate electrodes on MOCVD HfO2

Metal gate electrodes of sputtered aluminum (At), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO2) gate dielectrics. TiN, with a m...

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Bibliographic Details
Published in:Microelectronics and reliability 2005-05, Vol.45 (5-6), p.953-956
Main Authors: LEMME, M. C, EFAVI, J. K, GOTTLOB, H. D. B, MOLLENHAUER, T, WAHLBRINK, T, KURZ, H
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Metal gate electrodes of sputtered aluminum (At), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO2) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO2, exhibits promising characteristics as metal gate on HfO2. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic At electrodes are found unstable in conjunction with HfO2.
ISSN:0026-2714
1872-941X
1872-941X
DOI:10.1016/j.microrel.2004.11.018