Magnetic switching and magnetoresistance in nanoscale spin tunnel junctions

Co/AlO x / Co magnetic tunnel junctions in both multijunction arrays and double-tunnel junction geometries have been studied. The junctions exhibit magnetoresistance (MR) and change their resistance by ∼10% depending on the relative magnetic orientation of the tunnel junction electrodes. MR measurem...

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Bibliographic Details
Published in:Journal of applied physics 2002-11, Vol.92 (10), p.6062-6065
Main Authors: Urech, M., Korenivski, V., Haviland, D. B.
Format: Article
Language:English
Subjects:
Fysik
NATURAL SCIENCES
NATURVETENSKAP
Physics
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Summary:Co/AlO x / Co magnetic tunnel junctions in both multijunction arrays and double-tunnel junction geometries have been studied. The junctions exhibit magnetoresistance (MR) and change their resistance by ∼10% depending on the relative magnetic orientation of the tunnel junction electrodes. MR measurements show a strong dependence on the device geometry. We find that it is necessary to form tunnel junctions with electrode width ∼70 nm for the magnetic switching at the tunnel junction to be clean and single domain like.
ISSN:0021-8979
1089-7550
1089-7550
DOI:10.1063/1.1515099