Observation of near-surface electrically active defects in n-type 6H–SiC

In n-type 6H–SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1×10−13 cm−3, a region near the front surface contains defects with concentrations approachin...

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Bibliographic Details
Published in:Journal of applied physics 1998-04, Vol.83 (7), p.3649-3651
Main Authors: Doyle, J. P., Schöner, A., Nordell, N., Galeckas, A., Bleichner, H., Linnarsson, M. K., Linnros, J., Svensson, B. G.
Format: Article
Language:English
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Summary:In n-type 6H–SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1×10−13 cm−3, a region near the front surface contains defects with concentrations approaching 1014 cm−3. A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1×1016 cm−3 in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime.
ISSN:0021-8979
1089-7550
1089-7550
DOI:10.1063/1.367147