Electronic structure and electron dynamics at the GaSb(0 0 1) surface studied by femtosecond pump-and-probe pulsed laser photoemission spectroscopy

Transiently excited electron states at the GaSb(0 0 1) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at ∼250 meV above the valence band maximum with a strong...

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Bibliographic Details
Published in:Applied surface science 2006-05, Vol.252 (15), p.5308-5311
Main Authors: Månsson, Martin, Grishin, Michael A., Tjernberg, Oscar, Claesson, Tomas, Karlsson, Henrik S., Karlsson, Ulf O.
Format: Article
Language:English
Subjects:
Angle-resolved photoemission
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Engineering physics
Exact sciences and technology
Gallium antimonide
Laser methods
Material physics with surface physics
Materialfysik med ytfysik
Photoelectron emission
Physics
Surface states
TECHNOLOGY
TEKNIKVETENSKAP
Teknisk fysik
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Summary:Transiently excited electron states at the GaSb(0 0 1) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at ∼250 meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be ∼11 ps, associated with rapid carrier diffusion.
ISSN:0169-4332
1873-5584
1873-5584
DOI:10.1016/j.apsusc.2005.12.138