Charge accumulation at InAs surfaces

Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the condu...

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Bibliographic Details
Published in:Physical review letters 1996-05, Vol.76 (19), p.3626-3629
Main Authors: Olsson, LÖ, Andersson, CB, Håkansson, MC, Kanski, J, Ilver, L, Karlsson, UO
Format: Article
Language:English
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Summary:Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.
ISSN:0031-9007
1079-7114
1079-7114
DOI:10.1103/PhysRevLett.76.3626