Charge accumulation at InAs surfaces

Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the condu...

Full description

Saved in:
Bibliographic Details
Published in:Physical review letters 1996-05, Vol.76 (19), p.3626-3629
Main Authors: Olsson, LÖ, Andersson, CB, Håkansson, MC, Kanski, J, Ilver, L, Karlsson, UO
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c340t-a3c50bd823754f020842c4c38b1c9e35b9f11a8d7bc172829024ab020584c9b83
cites cdi_FETCH-LOGICAL-c340t-a3c50bd823754f020842c4c38b1c9e35b9f11a8d7bc172829024ab020584c9b83
container_end_page 3629
container_issue 19
container_start_page 3626
container_title Physical review letters
container_volume 76
creator Olsson, LÖ
Andersson, CB
Håkansson, MC
Kanski, J
Ilver, L
Karlsson, UO
description Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.
doi_str_mv 10.1103/PhysRevLett.76.3626
format article
fullrecord <record><control><sourceid>proquest_swepu</sourceid><recordid>TN_cdi_swepub_primary_oai_DiVA_org_kth_84165</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1859265137</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-a3c50bd823754f020842c4c38b1c9e35b9f11a8d7bc172829024ab020584c9b83</originalsourceid><addsrcrecordid>eNpNkF1LwzAYhYMobk5_gSC98MILO983SZv0csxPGCii3oYkS7dqu86kVfbv7eiQXZ2b55wDDyHnCGNEYDcvy014dT8z1zRjkY5ZStMDMkQQWSwQ-SEZAjCMMwAxICchfAIA0lQekwECpAiYDMnldKn9wkXa2rZqS90U9SrSTfS0moQotD7X1oVTcpTrMrizXY7I-_3d2_Qxnj0_PE0ns9gyDk2smU3AzCVlIuE5UJCcWm6ZNGgzxxKT5YhazoWxKKikGVCuTcclktvMSDYi1_1u-HXr1qi1LyrtN6rWhbotPiaq9gv11SyV5JgmHX7V42tff7cuNKoqgnVlqVeuboNCmWQ0TZCJDmU9an0dgnf5_zaC2tpUezaVSNXWZte62B20pnLzvU6vj_0BRtFw-w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1859265137</pqid></control><display><type>article</type><title>Charge accumulation at InAs surfaces</title><source>American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)</source><creator>Olsson, LÖ ; Andersson, CB ; Håkansson, MC ; Kanski, J ; Ilver, L ; Karlsson, UO</creator><creatorcontrib>Olsson, LÖ ; Andersson, CB ; Håkansson, MC ; Kanski, J ; Ilver, L ; Karlsson, UO</creatorcontrib><description>Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.</description><identifier>ISSN: 0031-9007</identifier><identifier>ISSN: 1079-7114</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.76.3626</identifier><identifier>PMID: 10061015</identifier><language>eng</language><publisher>United States</publisher><ispartof>Physical review letters, 1996-05, Vol.76 (19), p.3626-3629</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-a3c50bd823754f020842c4c38b1c9e35b9f11a8d7bc172829024ab020584c9b83</citedby><cites>FETCH-LOGICAL-c340t-a3c50bd823754f020842c4c38b1c9e35b9f11a8d7bc172829024ab020584c9b83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/10061015$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-84165$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Olsson, LÖ</creatorcontrib><creatorcontrib>Andersson, CB</creatorcontrib><creatorcontrib>Håkansson, MC</creatorcontrib><creatorcontrib>Kanski, J</creatorcontrib><creatorcontrib>Ilver, L</creatorcontrib><creatorcontrib>Karlsson, UO</creatorcontrib><title>Charge accumulation at InAs surfaces</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.</description><issn>0031-9007</issn><issn>1079-7114</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNpNkF1LwzAYhYMobk5_gSC98MILO983SZv0csxPGCii3oYkS7dqu86kVfbv7eiQXZ2b55wDDyHnCGNEYDcvy014dT8z1zRjkY5ZStMDMkQQWSwQ-SEZAjCMMwAxICchfAIA0lQekwECpAiYDMnldKn9wkXa2rZqS90U9SrSTfS0moQotD7X1oVTcpTrMrizXY7I-_3d2_Qxnj0_PE0ns9gyDk2smU3AzCVlIuE5UJCcWm6ZNGgzxxKT5YhazoWxKKikGVCuTcclktvMSDYi1_1u-HXr1qi1LyrtN6rWhbotPiaq9gv11SyV5JgmHX7V42tff7cuNKoqgnVlqVeuboNCmWQ0TZCJDmU9an0dgnf5_zaC2tpUezaVSNXWZte62B20pnLzvU6vj_0BRtFw-w</recordid><startdate>19960506</startdate><enddate>19960506</enddate><creator>Olsson, LÖ</creator><creator>Andersson, CB</creator><creator>Håkansson, MC</creator><creator>Kanski, J</creator><creator>Ilver, L</creator><creator>Karlsson, UO</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8V</scope></search><sort><creationdate>19960506</creationdate><title>Charge accumulation at InAs surfaces</title><author>Olsson, LÖ ; Andersson, CB ; Håkansson, MC ; Kanski, J ; Ilver, L ; Karlsson, UO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-a3c50bd823754f020842c4c38b1c9e35b9f11a8d7bc172829024ab020584c9b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Olsson, LÖ</creatorcontrib><creatorcontrib>Andersson, CB</creatorcontrib><creatorcontrib>Håkansson, MC</creatorcontrib><creatorcontrib>Kanski, J</creatorcontrib><creatorcontrib>Ilver, L</creatorcontrib><creatorcontrib>Karlsson, UO</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Kungliga Tekniska Högskolan</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Olsson, LÖ</au><au>Andersson, CB</au><au>Håkansson, MC</au><au>Kanski, J</au><au>Ilver, L</au><au>Karlsson, UO</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge accumulation at InAs surfaces</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>1996-05-06</date><risdate>1996</risdate><volume>76</volume><issue>19</issue><spage>3626</spage><epage>3629</epage><pages>3626-3629</pages><issn>0031-9007</issn><issn>1079-7114</issn><eissn>1079-7114</eissn><abstract>Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.</abstract><cop>United States</cop><pmid>10061015</pmid><doi>10.1103/PhysRevLett.76.3626</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0031-9007
ispartof Physical review letters, 1996-05, Vol.76 (19), p.3626-3629
issn 0031-9007
1079-7114
1079-7114
language eng
recordid cdi_swepub_primary_oai_DiVA_org_kth_84165
source American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)
title Charge accumulation at InAs surfaces
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T19%3A22%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_swepu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge%20accumulation%20at%20InAs%20surfaces&rft.jtitle=Physical%20review%20letters&rft.au=Olsson,%20L%C3%96&rft.date=1996-05-06&rft.volume=76&rft.issue=19&rft.spage=3626&rft.epage=3629&rft.pages=3626-3629&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.76.3626&rft_dat=%3Cproquest_swepu%3E1859265137%3C/proquest_swepu%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c340t-a3c50bd823754f020842c4c38b1c9e35b9f11a8d7bc172829024ab020584c9b83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1859265137&rft_id=info:pmid/10061015&rfr_iscdi=true