CeO2 on Si(111) 7 X 7 and Si(111)-H 1 X 1, an interface study by high-resolution photoelectron spectroscopy

• Published in: Applied surface science 1999-07, Vol.148 (3-4), p.164-170
• Main Authors: HIRSCHAUER, B, GÖTHELID, M, JANIN, E, LU, H, KARLSSON, U. O
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Interface structure and roughness; Physics; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0169-4332; 1873-5584; 1873-5584
• DOI: 10.1016/S0169-4332(99)00218-4

The formation of the CeO2-Si(111) interface was studied by high-resolution photoelectron spectroscopy. It is shown that CeO2 and Si(111) forms a highly reactive: interface with a strong interdiffusion of Si into the CeO2. A passive silicon surface formed by saturating the Si dangling bonds with hydrogen is considerably less reactive. Defects on the surface, however, act as nucleations centres for reactions of a Si:Ce:O matrix. Oxygen leaves the surface at about 800 degrees C and at 1000 degrees C a surface reconstruction of Si(111)-Ce 2 X 2/root 3 X root 3 is formed. (C) 1999 Elsevier Science B.V. All rights reserved.