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Junction barrier Schottky diodes in 6H SiC
Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage cur...
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| Published in: | Solid-state electronics 1998-09, Vol.42 (9), p.1757-1759 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c375t-e06a3ea17783721137db4bb46bb082d79f3a40367fd90f11c25ec581e73116a53 |
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| cites | cdi_FETCH-LOGICAL-c375t-e06a3ea17783721137db4bb46bb082d79f3a40367fd90f11c25ec581e73116a53 |
| container_end_page | 1759 |
| container_issue | 9 |
| container_start_page | 1757 |
| container_title | Solid-state electronics |
| container_volume | 42 |
| creator | Zetterling, Carl-Mikael Dahlquist, Fanny Lundberg, Nils Östling, Mikael Rottner, Kurt Ramberg, Lennart |
| description | Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attractive for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up to 1100
V with a leakage current density of 0.15
A
cm
−2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20
mΩ
cm
2, resulting in forward voltage drops of 2.6
V at 100
A
cm
−2. |
| doi_str_mv | 10.1016/S0038-1101(98)00142-7 |
| format | article |
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V with a leakage current density of 0.15
A
cm
−2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20
mΩ
cm
2, resulting in forward voltage drops of 2.6
V at 100
A
cm
−2.</description><identifier>ISSN: 0038-1101</identifier><identifier>ISSN: 1879-2405</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/S0038-1101(98)00142-7</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Current density ; Electric potential ; Electric resistance ; Junction barrier Schottky (JBS) diodes ; Leakage currents ; Schottky barrier diodes ; Semiconductor junctions ; Silicon carbide</subject><ispartof>Solid-state electronics, 1998-09, Vol.42 (9), p.1757-1759</ispartof><rights>1998</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c375t-e06a3ea17783721137db4bb46bb082d79f3a40367fd90f11c25ec581e73116a53</citedby><cites>FETCH-LOGICAL-c375t-e06a3ea17783721137db4bb46bb082d79f3a40367fd90f11c25ec581e73116a53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-85409$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Zetterling, Carl-Mikael</creatorcontrib><creatorcontrib>Dahlquist, Fanny</creatorcontrib><creatorcontrib>Lundberg, Nils</creatorcontrib><creatorcontrib>Östling, Mikael</creatorcontrib><creatorcontrib>Rottner, Kurt</creatorcontrib><creatorcontrib>Ramberg, Lennart</creatorcontrib><title>Junction barrier Schottky diodes in 6H SiC</title><title>Solid-state electronics</title><description>Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attractive for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up to 1100
V with a leakage current density of 0.15
A
cm
−2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20
mΩ
cm
2, resulting in forward voltage drops of 2.6
V at 100
A
cm
−2.</description><subject>Current density</subject><subject>Electric potential</subject><subject>Electric resistance</subject><subject>Junction barrier Schottky (JBS) diodes</subject><subject>Leakage currents</subject><subject>Schottky barrier diodes</subject><subject>Semiconductor junctions</subject><subject>Silicon carbide</subject><issn>0038-1101</issn><issn>1879-2405</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQAC0EEqXwCUg5IUAE1nb8yAlV5VFQJQ4FrpbjONS0jYudgPr3pC3qldPuYXakHYROMVxjwPxmAkBlirv9PJcXADgjqdhDPSxFnpIM2D7q7ZBDdBTjJwAQjqGHLp_b2jTO10mhQ3A2JBMz9U0zWyWl86WNiasTPkombniMDio9j_bkb_bR28P963CUjl8en4aDcWqoYE1qgWtqNRZCUkEwpqIssqLIeFGAJKXIK6ozoFxUZQ4VxoYwa5jEVlCMuWa0j6623vhjl22hlsEtdFgpr526c-8D5cOHmjVTJVkGeYefbfFl8F-tjY1auGjsfK5r69uoiGCMcrL2si1ogo8x2GpnxqDWIdUmpFpXUrlUm5BKdHe32zvbPf3dJVLROFsbW7pgTaNK7_4x_AJk13fh</recordid><startdate>19980901</startdate><enddate>19980901</enddate><creator>Zetterling, Carl-Mikael</creator><creator>Dahlquist, Fanny</creator><creator>Lundberg, Nils</creator><creator>Östling, Mikael</creator><creator>Rottner, Kurt</creator><creator>Ramberg, Lennart</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8V</scope></search><sort><creationdate>19980901</creationdate><title>Junction barrier Schottky diodes in 6H SiC</title><author>Zetterling, Carl-Mikael ; Dahlquist, Fanny ; Lundberg, Nils ; Östling, Mikael ; Rottner, Kurt ; Ramberg, Lennart</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c375t-e06a3ea17783721137db4bb46bb082d79f3a40367fd90f11c25ec581e73116a53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Current density</topic><topic>Electric potential</topic><topic>Electric resistance</topic><topic>Junction barrier Schottky (JBS) diodes</topic><topic>Leakage currents</topic><topic>Schottky barrier diodes</topic><topic>Semiconductor junctions</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zetterling, Carl-Mikael</creatorcontrib><creatorcontrib>Dahlquist, Fanny</creatorcontrib><creatorcontrib>Lundberg, Nils</creatorcontrib><creatorcontrib>Östling, Mikael</creatorcontrib><creatorcontrib>Rottner, Kurt</creatorcontrib><creatorcontrib>Ramberg, Lennart</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Kungliga Tekniska Högskolan</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zetterling, Carl-Mikael</au><au>Dahlquist, Fanny</au><au>Lundberg, Nils</au><au>Östling, Mikael</au><au>Rottner, Kurt</au><au>Ramberg, Lennart</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Junction barrier Schottky diodes in 6H SiC</atitle><jtitle>Solid-state electronics</jtitle><date>1998-09-01</date><risdate>1998</risdate><volume>42</volume><issue>9</issue><spage>1757</spage><epage>1759</epage><pages>1757-1759</pages><issn>0038-1101</issn><issn>1879-2405</issn><eissn>1879-2405</eissn><abstract>Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attractive for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up to 1100
V with a leakage current density of 0.15
A
cm
−2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20
mΩ
cm
2, resulting in forward voltage drops of 2.6
V at 100
A
cm
−2.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1101(98)00142-7</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1101 |
| ispartof | Solid-state electronics, 1998-09, Vol.42 (9), p.1757-1759 |
| issn | 0038-1101 1879-2405 1879-2405 |
| language | eng |
| recordid | cdi_swepub_primary_oai_DiVA_org_kth_85409 |
| source | ScienceDirect Journals |
| subjects | Current density Electric potential Electric resistance Junction barrier Schottky (JBS) diodes Leakage currents Schottky barrier diodes Semiconductor junctions Silicon carbide |
| title | Junction barrier Schottky diodes in 6H SiC |
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