A study of optical characteristics of damage in oxygen-implanted 6H-SiC

The damage behavior of O(+) ions implanted into SiC is studied. Rutherford backscattering spectrometry and channeling, atomic force microscopy, spectroscopic ellipsometry, and Raman spectroscopy are used to characterize the materials. (AIAA)

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Bibliographic Details
Published in:Journal of materials science letters 1999, Vol.18 (12), p.979-982
Main Authors: LIANWEI WANG, JIPO HUANG, CHENGLU LIN, SHICHANG ZOU, YUXIANG ZHENG, XINJUN WANG, DAMING HUANG, ZETTERLING, C. M, ÖSTLING, M
Format: Article
Language:English
Subjects:
Atomic force microscopy
Carrier concentration
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping (additives)
Doping and impurity implantation in other materials
Elastic damage energy
Energy gap
Exact sciences and technology
Ion implantation
Light absorption
Nanostructured materials
Oxidation
Oxygen
Physics
Point defects
Radiation damage
Rutherford backscattering spectroscopy
Silicon carbide
Spectroscopic ellipsometry
Structure of solids and liquids
crystallography
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Description
Summary:The damage behavior of O(+) ions implanted into SiC is studied. Rutherford backscattering spectrometry and channeling, atomic force microscopy, spectroscopic ellipsometry, and Raman spectroscopy are used to characterize the materials. (AIAA)
ISSN:0261-8028
1573-4811
DOI:10.1023/A:1006627610829