Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering

• Published in: Thin solid films 2007-02, Vol.515 (7), p.3434-3438
• Main Authors: Alami, J., Eklund, P., Andersson, J.M., Lattemann, M., Wallin, E., Bohlmark, J., Persson, P., Helmersson, U.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Fysik; HPPMS; Ionized PVD; IPVD; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; NATURAL SCIENCES; NATURVETENSKAP; Physics; Pulsed sputtering; Single-crystal and powder diffraction; Structure of solids and liquids; crystallography; Theory and models of film growth; X-ray diffraction and scattering
• ISSN: 0040-6090; 1879-2731; 1879-2731
• DOI: 10.1016/j.tsf.2006.10.013

Ta thin films were grown on Si substrates at different inclination angles with respect to the sputter source using high power impulse magnetron sputtering (HIPIMS), an ionized physical vapor deposition technique. The ionization allowed for better control of the energy and directionality of the sputtered species, and consequently for improved properties of the deposited films. Depositions were made on Si substrates with the native oxide intact. The structure of the as-deposited films was investigated using X-ray diffraction, while a four-point probe setup was used to measure the resistivity. A substrate bias process-window for growth of bcc-Ta was observed. However, the process-window position changed with changing inclination angles of the substrate. The formation of this low resistivity bcc-phase could be understood in light of the high ion flux from the HIPIMS discharge.