Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region

A layer-on-substrate model is used to obtain the infrared reflectance for 3C–SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C–SiC in the reststrahlen region is assessed. Different simulated reflectance spec...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2014-04, Vol.439, p.115-118
Main Authors: Engelbrecht, J.A.A., Janzén, E., Henry, A., van Rooyen, I.J.
Format: Article
Language:English
Subjects:
Condensed matter
Damage
DIELECTRIC PARAMETERS
Dielectrics
Infrared reflectance
layer-on-substrate
Mathematical models
MORPHOLOGY
NUCLEAR FUEL CYCLE AND FUEL MATERIALS
Phonons
Reflectance
Reflectivity
Reststrahlen region
SiC
SiC Wafers
TECHNOLOGY
TEKNIKVETENSKAP
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Description
Summary:A layer-on-substrate model is used to obtain the infrared reflectance for 3C–SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C–SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the “substrate” were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and “thickness” of damaged surface layer.
ISSN:0921-4526
1873-2135
1873-2135
DOI:10.1016/j.physb.2013.10.058