Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC

The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown car...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2014-01, Vol.56 (1), p.12004-6
Main Authors: Grivickas, V, Gulbinas, K, Jokubavičius, V, Sun, J W, Karaliūnas, M, Kamiyama, S, Linnarsson, M, Kaiser, M, Wellmann, P, Syväjärvi, M
Format: Article
Language:English
Subjects:
Carbon
Carrier lifetime
Decay rate
Defects
Diffusion
Inclusions
Photoluminescence
Radiative recombination
Sublimation
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Summary:The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photo luminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.
ISSN:1757-899X
1757-8981
1757-899X
DOI:10.1088/1757-899X/56/1/012004