Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC

Two overlapping photoluminescent (PL) bands with a peaks (half-width) at 1.95 eV (0.45 eV) and 2.15 eV (0.25 eV), correspondingly at 300 K, are observed in heavily B-N co-doped 6H-SiC epilayers under high-level excitation condition. The low energy band dominates at low temperatures and decreases tow...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2014-01, Vol.56 (1), p.12003-5
Main Authors: Gavryushin, V, Gulbinas, K, Grivickas, V, Karaliūnas, M, Stasiūpnas, M, Jokubavičius, V, Sun, J W, Syväjärvi, M
Format: Article
Language:English
Subjects:
Bands
Conduction band
Conduction bands
Electron emission
Emission
Energy bands
Free electrons
Low temperature
Nitrogen
Noise levels
Phonons
Photoluminescence
Trapping
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Summary:Two overlapping photoluminescent (PL) bands with a peaks (half-width) at 1.95 eV (0.45 eV) and 2.15 eV (0.25 eV), correspondingly at 300 K, are observed in heavily B-N co-doped 6H-SiC epilayers under high-level excitation condition. The low energy band dominates at low temperatures and decreases towards 300 K which is assigned to DAP emission from the nitrogen trap to the deep boron (dB) with phonon-assistance. The 2.15 eV band slightly increases with temperature and becomes comparable with the former one at 300 K. We present a modelling comprising electron de-trapping from the N-trap, i.e. calculating trapping and de-trapping probabilities. The T-dependence of the 2.15 eV band can be explained by free electron emission from the conduction band into the dB center provided by similar phonon-assistance.
ISSN:1757-899X
1757-8981
1757-899X
DOI:10.1088/1757-899X/56/1/012003