Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient

Ambipolar polymeric field‐effect transistors can be programmed into a p‐ or n‐type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS‐compatible mem...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2014-11, Vol.26 (44), p.7438-7443
Main Authors: Fabiano, Simone, Usta, Hakan, Forchheimer, Robert, Crispin, Xavier, Facchetti, Antonio, Berggren, Magnus
Format: Article
Language:English
Subjects:
ambipolar polymers
Charge transport
CMOS-like inverters
Devices
Ferroelectric materials
ferroelectrics
Field effect transistors
Insulators
Logic circuits
memories
P(VDF-TrFE)
Polarity
Semiconductor devices
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Summary:Ambipolar polymeric field‐effect transistors can be programmed into a p‐ or n‐type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS‐compatible memory cells for non‐destructive read‐out operations.
ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201403070