Defect formation in GaAs/GaNxAs1-x core/shell nanowires

Photoluminescence and optically detected magnetic resonance (ODMR) spectroscopies are used to investigate the formation and role of defects in GaAs/GaNxAs1-x core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. Gallium vacancies, which act as non-radiative recombination (NRR)...

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Published in:Applied physics letters 2016-11, Vol.109 (20)
Main Authors: Stehr, J. E., Chen, S. L., Jansson, M., Ishikawa, F., Chen, W. M., Buyanova, I. A.
Format: Article
Language:English
Subjects:
Applied physics
Defects
Epitaxial growth
Gallium arsenide
Magnetic resonance
Molecular beam epitaxy
Nanowires
Nitrogen
Photoluminescence
Radiative recombination
Silicon substrates
Surface defects
Temperature dependence
Vacancies
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container_issue 20
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container_title Applied physics letters
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creator Stehr, J. E.
Chen, S. L.
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description Photoluminescence and optically detected magnetic resonance (ODMR) spectroscopies are used to investigate the formation and role of defects in GaAs/GaNxAs1-x core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. Gallium vacancies, which act as non-radiative recombination (NRR) centers, are identified by ODMR. It is shown that the defects are formed in bulk regions, i.e., not on the surface, of the GaNAs shell and that their concentration increases with increasing nitrogen content. Temperature dependent photoluminescence experiments reveal, on the other hand, suppressed thermal quenching of the near-band-edge emission with increasing [N]. This leads to the conclusion that the dominant NRR processes in the studied NWs are governed by surface defects, whereas the role of gallium vacancies in the observed thermally activated NRR is minor.
doi_str_mv 10.1063/1.4967721
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics)
subjects Applied physics
Defects
Epitaxial growth
Gallium arsenide
Magnetic resonance
Molecular beam epitaxy
Nanowires
Nitrogen
Photoluminescence
Radiative recombination
Silicon substrates
Surface defects
Temperature dependence
Vacancies
title Defect formation in GaAs/GaNxAs1-x core/shell nanowires
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