Loading…
Radio frequency dual magnetron sputtering deposition and characterization of nanocomposite Al2O3–ZrO2 thin films
Radio frequency magnetron sputtering from oxide targets has been used to synthesize crystalline alumina–zirconia nanocomposites at a relatively low temperature of 450°C. Films of different compositions have been deposited ranging from pure zirconia to pure alumina, the compositions being measured wi...
Saved in:
Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2006-03, Vol.24 (2), p.309-316 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Radio frequency magnetron sputtering from oxide targets has been used to synthesize crystalline alumina–zirconia nanocomposites at a relatively low temperature of 450°C. Films of different compositions have been deposited ranging from pure zirconia to pure alumina, the compositions being measured with Rutherford backscattering and elastic recoil detection analysis. X-ray diffraction studies show the presence of the monoclinic zirconia phase in pure zirconia films. Addition of alumina into the film results in the growth of the cubic zirconia phase and amorphous alumina. No crystalline alumina was detected in either the composite or the pure alumina film. The microstructure of the films as studied by high resolution electron microscopy and scanning transmission electron microscopy shows a columnar growth mode in both the pure zirconia and nanocomposite films, but reveals differences in the intracolumnar structure. For the nanocomposite small equiaxed grains, ∼5nm in size, are found at the base of the columns at the interface with the substrate. An amorphous tissue of alumina was present between the small crystallites in the case of the nanocomposite. |
---|---|
ISSN: | 0734-2101 1520-8559 1520-8559 |
DOI: | 10.1116/1.2171709 |