Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

The threshold voltage is an important property of organic field‐effect transistors. By applying a self‐assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly a...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2012-01, Vol.8 (2), p.241-245
Main Authors: Gholamrezaie, Fatemeh, Andringa, Anne-Marije, Roelofs, W. S. Christian, Neuhold, Alfred, Kemerink, Martijn, Blom, Paul W. M., de Leeuw, Dago M.
Format: Article
Language:English
Subjects:
Nanotechnology
organic field-effect transistors
organosilanes
scanning Kelvin-probe microscopy
self-assembly
Sensors
threshold voltage
Transistors
Trapping
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Summary:The threshold voltage is an important property of organic field‐effect transistors. By applying a self‐assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.
ISSN:1613-6810
1613-6829
1613-6829
DOI:10.1002/smll.201101467