Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field

A microphotoluminescence study of single InAs/GaAs quantum dots (QDs) in the presence of an applied external magnetic field is presented. Attention is focused on the redistribution between the spectral lines of a single QD observed at increasing magnetic field parallel to the growth direction (Farad...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2008-08, Vol.78 (7), p.075306, Article 075306
Main Authors: Moskalenko, E. S., Larsson, L. A., Larsson, M., Holtz, P. O., Schoenfeld, W. V., Petroff, P. M.
Format: Article
Language:English
Subjects:
NATURAL SCIENCES
NATURVETENSKAP
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Summary:A microphotoluminescence study of single InAs/GaAs quantum dots (QDs) in the presence of an applied external magnetic field is presented. Attention is focused on the redistribution between the spectral lines of a single QD observed at increasing magnetic field parallel to the growth direction (Faraday geometry). The redistribution effect is explained by considering the electron drift velocity in the QD plane that affects the probability for capture into the QD. In contrast, no redistribution is observed when applying the magnetic field perpendicular to the growth direction (Voigt geometry).
ISSN:1098-0121
1550-235X
1550-235X
DOI:10.1103/PhysRevB.78.075306